4 inch GaN-on-Si epi wafer manufacturer for Power HEMT

4 inch GaN-on-Si epi wafer manufacturer Power HEMT

Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers:

5G-related RF devices, such as power amplifier

High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.

Durable and reliable devices in harsh environments

High-end sensor devices

4 inch GaN-on-Si epi wafer manufacturer for Power HEMT Images